- 您现在的位置：买卖IC网 > Sheet目录406 > DMN3024SFG-7 (Diodes Inc)MOSFET N-CH 30V 7.5A PWRDI3333-8
DMN3024SFG
Electrical Characteristics T A = 25°C unless otherwise specified
Characteristic
Symbol
Min
Typ
Max
Unit
Test Condition
OFF CHARACTERISTICS (Note 8)
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Source Leakage
BV DSS
I DSS
I GSS
30
-
-
-
-
-
-
1
±100
V
μ A
nA
V GS = 0V, I D = 250 μ A
V DS = 30V, V GS = 0V
V GS = ±25V, V DS = 0V
ON CHARACTERISTICS (Note 8)
Gate Threshold Voltage
Static Drain-Source On-Resistance
Forward Transfer Admittance
Diode Forward Voltage
V GS(th)
R DS (ON)
|Y fs |
V SD
1.0
-
-
-
-
1.3
15
24
11
0.69
2.4
23
33
-
1
V
m ?
S
V
V DS = V GS , I D = 250 μ A
V GS = 10V, I D = 10A
V GS = 4.5V, I D = 7.5A
V DS = 5V, I D = 10.0A
V GS = 0V, I S = 1A
DYNAMIC CHARACTERISTICS (Note 9)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
Total Gate Charge V GS = 4.5V
Total Gate Charge V GS = 10V
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
C iss
C oss
C rss
R g
Q g
Q g
Q gs
Q gd
t D(on)
t r
t D(off)
t f
-
-
-
0.4
-
-
-
-
-
-
-
-
479
97
61
1.1
5.0
10.5
1.8
1.6
2.9
7.9
14.6
3.1
-
-
-
1.6
-
-
-
-
-
-
-
-
pF
pF
pF
?
nC
nC
nC
nC
ns
ns
ns
ns
V DS = 15V, V GS = 0V,
f = 1.0MHz
V DS = 0V, V GS = 0V, f = 1MHz
V DS = 15V, I D = 10A
V GS = 10V, V DS = 15V,
R G = 3 ? , R L = 1.5 ? ,
Notes:
8. Short duration pulse test used to minimize self-heating effect.
9. Guaranteed by design. Not subject to product testing.
30
V GS = 10V
20
25
V GS = 4.5V
15
V DS = 5V
20
V GS = 4.0V
15
V GS = 3.5V
10
V GS = 150°C
10
5
V GS = 125°C
V GS = 85°C
5
0
V GS = 2.5V
V GS = 3.0V
0
V GS = 25°C
V GS = -55°C
0
0.5
1
1.5 2 2.5 3 3.5 4 4.5
5
0
0.5 1 1.5 2 2.5 3 3.5
4
V DS , DRAIN-SOURCE VOLTAGE (V)
Fig. 1 Typical Output Characteristic
POWERDI is a registered trademark of Diodes Incorporated
V GS , GATE-SOURCE VOLTAGE (V)
Fig. 2 Typical Transfer Characteristic
DMN3024SFG
Document number: DS35439 Rev. 3 - 2
3 of 7
www.diodes.com
May 2012
? Diodes Incorporated
发布紧急采购，3分钟左右您将得到回复。
相关PDF资料
DMN3029LFG-7
MOSFET N-CH 30V 5.3A PWRDI333-8
DMN3030LSS-13
MOSFET N-CH 30V 9A 8-SOIC
DMN3031LSS-13
MOSFET N-CH 30V 9A 8SOP
DMN3033LDM-7
MOSFET N-CH 30V 6.9A SOT-26
DMN3033LSD-13
MOSFET N-CH 30V 6.9A 8-SOIC
DMN3033LSN-7
MOSFET N-CH 30V 6A SC59-3
DMN3050S-7
MOSFET N-CH 30V 5.2A SOT-23
DMN3051L-7
MOSFET N-CH 30V 5.8A SOT23-3
相关代理商/技术参数
DMN3025LFG
制造商:DIODES 制造商全称:Diodes Incorporated 功能描述:30V N-CHANNEL ENHANCEMENT MODE MOSFET
DMN3025LFG-13
制造商:Diodes Incorporated 功能描述:MOSFET BVDSS: 25V-30V POWERDI3333-8 T&R 3K - Tape and Reel 制造商:Diodes Incorporated 功能描述:MOSFET N-CH 30V POWERDI3333-8
DMN3025LFG-7
制造商:Diodes Incorporated 功能描述:MOSFET BVDSS: 25V-30V POWERDI3333-8 T&R 2K - Tape and Reel 制造商:Diodes Incorporated 功能描述:MOSFET N CH 30V 7.5A POWERDI
DMN3025LSS-13
制造商:Diodes Incorporated 功能描述:MOSFET N CH 30V 7.2A SO-8 制造商:Diodes Incorporated 功能描述:30V N-CH MOSFET
DMN3029LFG
制造商:DIODES 制造商全称:Diodes Incorporated 功能描述:N-CHANNEL ENHANCEMENT MODE MOSFET
DMN3029LFG-13
功能描述:MOSFET N-CH 30V 5.3A PWRDI333-8 RoHS:是 类别:分离式半导体产品 >> FET - 单 系列:- 标准包装:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道，金属氧化物 FET 特点:逻辑电平门 漏极至源极电压(Vdss):200V 电流 - 连续漏极(Id) @ 25° C:18A 开态Rds（最大）@ Id, Vgs @ 25° C:180 毫欧 @ 9A，10V Id 时的 Vgs(th)（最大）:4V @ 250µA 闸电荷(Qg) @ Vgs:72nC @ 10V 输入电容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安装类型:通孔 封装/外壳:TO-220-3 整包 供应商设备封装:TO-220FP 包装:管件
DMN3029LFG-7
功能描述:MOSFET N-CH 30V 5.3A PWRDI333-8 RoHS:是 类别:分离式半导体产品 >> FET - 单 系列:- 标准包装:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道，金属氧化物 FET 特点:逻辑电平门 漏极至源极电压(Vdss):200V 电流 - 连续漏极(Id) @ 25° C:18A 开态Rds（最大）@ Id, Vgs @ 25° C:180 毫欧 @ 9A，10V Id 时的 Vgs(th)（最大）:4V @ 250µA 闸电荷(Qg) @ Vgs:72nC @ 10V 输入电容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安装类型:通孔 封装/外壳:TO-220-3 整包 供应商设备封装:TO-220FP 包装:管件
DMN3030LFG-7
功能描述:MOSFET 650V N-Ch Enh FET 30V VDSS 25V VGSS RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube